Semiconductor device, Manufacturing method for the same, and electronic device

ABSTRACT

A manufacturing method for a semiconductor device, the method including forming a thin film transistor by forming a polysilicon thin film on an insulating substrate, forming a gate electrode via a gate insulating film, and forming source/drain regions and a channel region by ion implantation in the polysilicon thin film by using the gate electrode as a mask, forming an interconnection layer on an interlayer dielectric film covering this thin film transistor and forming a first contact to be connected to the thin film transistor through the interlayer dielectric film, forming a silicon hydronitride film on the interlayer dielectric film so as to cover the interconnection layer, forming a lower electrode on this silicon hydronitride film and forming a second contact to be connected to the interconnection layer through the silicon hydronitride film, and forming a ferroelectric layer on the lower electrode.

RELATED APPLICATIONS

This Application is a Divisional Application of U. S. patent applicationSer. No. 11/159,097 filed on Jun. 23, 2005.

BACKGROUND OF THE INVENTION

1. Technical Field of the Invention

The present invention relates to a semiconductor device having adielectric capacitor, a manufacturing method for the same, and anelectronic device using the same, and more specifically to asemiconductor device in which a dielectric capacitor is driven by anactive element formed on an insulating substrate, a manufacturing methodfor the same, and an electronic device using the same.

2. Description of the Related Art

Recently, semiconductor devices for memories such as a nonvolatilememory (ferroelectric memory) using ferroelectric materials and adynamic random access memory (DRAM) using high-dielectric materials havebeen actively studied, and a number of products of these have beensupplied onto the market. Semiconductor devices of these ferroelectricmemories and DRAMs have a switching transistor, a capacitor is connectedto one diffusion layer (source region or drain region) of this switchingtransistor to form a memory cell, and charges are accumulated in thiscapacitor, whereby data is stored.

As a ferroelectric capacitor to be used as a ferroelectric memory usesferroelectric materials such as PZT (PbZr_(x)Ti_(1-x)O₃), PLZT(Pb_(1-y)La_(y)Zr_(x)Ti_(1-x)O₃), and SBT (SrBi₂Ta₂O₉) as a capacitanceinsulating film, and by polarizing the ferroelectric materials,nonvolatile data can be stored. On the other hand, a high-dielectriccapacitor to be used as a DRAM uses a high-dielectric thin film of BST(Ba_(x)Sr_(1-x)TiO) as a capacitance insulating film, and effective filmthickness reduction has been promoted in accordance with requiredcapacity increases.

For example, prior art 1 (Japanese Published Unexamined PatentApplication No. 2002-334970) discloses a semiconductor device having aswitching transistor and a capacitor. FIG. 13 is a sectional view ofsuch a conventional semiconductor device. As shown in FIG. 13, in thissemiconductor device, an MOS (Metal Oxide Semiconductor) type switchingtransistor 119 is provided on the surface of a silicon single crystalsubstrate 101, and a dielectric capacitor 118 is provided above thisswitching transistor 119 via interlayer dielectric films 105, 108, and111. The source or drain of the switching transistor 119 is connected toa lower electrode 113 of the dielectric capacitor 118 by a multilayermetal interconnection structure including interconnections 107 and 110.

In the switching transistor 119, two diffusion layers 103 that serve asa source and a drain are formed on the surface of a silicon singlecrystal substrate 101 sectioned by oxide films 102, and above thechannel region between the diffusion layers 103, a gate electrode 104 isformed via a gate insulating film 120. An interlayer dielectric film 105is formed so as to cover this switching transistor 109, and metalinterconnections 107 are formed thereon. The metal interconnections 107are electrically connected to the two diffusion layers 103 of theswitching transistor 119 by plugs 106. The metal interconnection 107connected to one diffusion layer 103 is used as an interconnection forconnecting the dielectric capacitor 118 and the switching transistor119. The metal interconnection 107 connected to the other diffusionlayer 103 is used as a bit line.

An interlayer dielectric film 108 is formed so as to cover theinterlayer dielectric film 105 and the interconnection 107, and a metalinterconnection 110 is formed thereon. Furthermore, an interlayerdielectric film 111 is formed so as to cover the interlayer dielectricfilm 108 and the interconnection 110, and on this interlayer dielectricfilm 111, a dielectric capacitor 118 is provided. In this dielectriccapacitor 118, a lower electrode 113, a dielectric thin film 114, and anupper electrode 115 are laminated in order. The lower electrode 113 iselectrically connected to the interconnection 110 via a via hole 112.

Furthermore, an interlayer dielectric film 116 is formed so as to coverthe dielectric capacitor 118 and the interlayer dielectric film 111, andon this interlayer dielectric film 116, a metal interconnection 117 isprovided. This metal interconnection 117 is provided so as to fill up acontact hole formed in the interlayer dielectric film 116, and iselectrically connected to the upper electrode 115. The metalinterconnection 117 is used as a plate interconnection.

In these lower electrode 113 and upper electrode 115, in order toprevent deterioration of intrinsic polarization of the dielectric thinfilm 114 due to deficiency of oxygen, a metal having a low affinity withoxygen such as Pt, Pd, Ir, Rh, Os, Au, Ag, or Ru, or a conductive oxidefilm of PtO_(x), PdO_(x), IrO_(x), RhO_(x), OsO_(x), AuO_(x), AgO_(x) orRuO_(x) is used. At the interface between the lower electrode 113 andthe via hole 112, in order to prevent relative reaction and relativediffusion of Pt or the like of the lower electrode 113 and W or the likeof the via hole 112, a barrier layer (not shown) made of a conductivenitride film of TiN or the like is formed.

The dielectric thin film 114 is a ferroelectric thin film of BaTiO₃,PbTiO₃, PZT, PLZT, SBT, or the like or a high-dielectric thin film ofBST etc. The dielectric thin film of these is formed on the lowerelectrode by means of sputtering, a sol-gel method, or a CVD (ChemicalVapor Deposition) method, and is crystallized into a perovskite-likestructure by annealing at a predetermined temperature. The ferroelectricthin film thus formed has a polycrystalline structure. In thisannealing, according to prior art 2 (Japanese Published UnexaminedPatent Application No. H04-85878), it is preferable that heating iscarried out in the atmosphere containing oxygen at 600° C., and one hourof annealing is necessary. In prior art 1, it is mentioned that the CVDmethod is used for film formation, crystallization is carried out byheating in the atmosphere of hydrogen to 300 to 500° C., and the surfaceof the film can be flattened by irradiation with an excimer laser.

In such a conventional semiconductor device, the structure below thelower electrode 113 of the memory cell is the same as that of an LSI(Large Scale Integrated Circuit) that has no capacitor. Therefore, thiscan be manufactured by a normal LSI manufacturing process by using anexisting logic circuit.

However, as described above, this conventional semiconductor nonvolatilestorage device is manufactured by the same LSI manufacturing process asthat for a general existing logic circuit, so that the manufacturingcosts are comparatively high although the storage capacity iscomparatively easily increased.

On the other hand, it is expected that not only computers but alsovarious electronic devices including televisions and other home electricappliances will be connected to the Internet in accordance with theadvent of a ubiquitous society. Accordingly, the number of addresses ofelectronic devices on Internet (IP addresses) will be rapidly increasedue to introduction of the Internet protocol IPv6. The increase in thenumber of IP addresses will lead to an increase in temporary (the periodof use is much shorter than that of conventional electronic devices) ordisposable electronic (recognition and storage) devices such as IC tags(wireless ID tags and radio-frequency ID tags, etc.) and IC cards. Mostof these electronic devices have no power source, so that nonvolatilesemiconductor devices using the above-described ferroelectric thin filmsor high-dielectric thin films are used for recognition and storage ofdata. In such temporary or disposable electronic devices, manufacturingof a semiconductor device having a proper storage capacity at very lowcost is demanded more than realization of large capacity. However, it isdifficult to meet this demand by the above-described conventionalsemiconductor devices.

On the other hand, as a transistor that is manufactured at low cost andreplaced with the conventional switching transistor manufactured by theLSI manufacturing process, a thin film transistor is available in whicha semiconductor layer is formed on an inexpensive substrate such as alow melting point substrate containing no alkali metal (alkali-free) andused as an active layer. As this thin film transistor, one usingamorphous silicon or polysilicon (polycrystalline silicon) hydride as anactive layer has been made practicable, however, in a nonvolatilesemiconductor device, a polysilicon thin film having higher carriermobility and higher drive performance has been used. In a thin filmtransistor using this polysilicon thin film, for example, as disclosedin prior art 3 (Japanese Published Unexamined Patent Application No.H09-116159) and prior art 4 (Japanese Published Unexamined PatentApplication No. H10-242471), a polysilicon thin film serving as asource/drain and a channel is formed on an insulating substrate, a gateinsulating film and a gate electrode are formed on this polysilicon thinfilm, and hydrogen plasma processing is applied, whereby the polysiliconthin film is activated by hydrogen passivation.

On the other hand, it is desirable that a semiconductor storage deviceis used together with a higher-function semiconductor device having anoperation function. Conventionally, by forming a high-function elementsuch as a CPU formed by the LSI process on a single crystal siliconsubstrate and a memory element into one chip, the packaging cost wasreduced. Furthermore, for the memory element, the design rules were mademore detailed and the memory capacity to be formed per unit area wasincreased, and as a result, the costs were reduced.

On the other hand, the polysilicon thin film of the thin film transistoris formed by, for example, the CVD method, and this CVD film containsmany Si dangling bonds that do not rarely exist in a silicon singlecrystal substrate. Si dangling bonds are dangling bonds with Si—Si bondscut, and are bonded to contaminant atoms and deteriorate thesemiconductor performance. Therefore, it is necessary to eliminate suchSi dangling bonds.

Therefore, for example, in prior art 3, Si dangling bonds are bonded tohydrogen by applying hydrogen plasma processing to a polysilicon filmthat serves as a source/drain region and a channel region formed on aninsulating substrate to form Si—H bonds, whereby the dangling bonds areelectrically inactivated.

However, the above-described conventional techniques have the followingproblems. When a switching transistor is formed by using the techniqueof prior art 2 and a dielectric capacitor is formed thereon, Si—H bondsare thermally unstable, and due to the heating process when forming aferroelectric oxide film to be used for the dielectric capacitor, theSi—H bonds are cut and Si dangling bonds are generated again.

In addition, due to action of hydrogen contained in the polysilicon filmas a reductant, oxygen deficiency occurs in the ferroelectric oxide filmto be used for the dielectric capacitor, and this may result in loweringof the non-dielectric constant and an increase in leak current.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor devicewhich has stable Si—H bonds in its switching transistor region and doesnot cause oxygen deficiency in the ferroelectric oxide film of thedielectric capacitor region, a manufacturing method for the same, and anelectronic device using the same.

A semiconductor device according to a first aspect of the presentinvention comprises an insulating substrate; an active element formed inan active element layer disposed above this insulating substrate; aferroelectric capacitive element formed in a ferroelectric capacitiveelement layer disposed above the active element layer; and a siliconhydronitride layer formed between the active element layer and theferroelectric capacitive element layer, wherein the active elementincludes a thin film transistor having a polysilicon thin film havingsource/drain regions and a channel region, a gate electrode formed abovethe channel region, and a gate insulating film formed between thepolysilicon thin film and the gate electrode, the active element layerhas an interlayer dielectric film which covers the polysilicon thin filmand includes the gate electrode embedded, the ferroelectric capacitiveelement is formed by laminating a lower electrode, a ferroelectriclayer, and an upper electrode, and the hydrogen concentration of theactive element layer is higher than the hydrogen concentration of theferroelectric capacitive element.

In the present invention, the active element layer is composed of anactive element having a thin film transistor, and an interlayerdielectric film that covers the polysilicon thin film of the thin filmtransistor and includes a gate electrode embedded therein. Theferroelectric capacitive element layer is composed of a ferroelectriccapacitive element, and in some cases, a protective film is formed so asto cover this ferroelectric capacitive element.

A semiconductor device according to a second aspect of the presentinvention comprises an insulating substrate; an active element formed inan active element layer disposed above the insulating substrate; aferroelectric capacitive element formed in a ferroelectric capacitiveelement layer disposed above the active element layer; a siliconhydronitride layer formed between the active element layer and theferroelectric capacitive element layer; and a conductive oxide layerformed between this silicon hydronitride layer and the ferroelectriccapacitive element, wherein the active element includes a thin filmtransistor having a polysilicon thin film that has source/drain regionsand a channel region, a gate electrode formed above the channel region,and a gate insulating film formed between the polysilicon thin film andthe gate electrode, and the active element layer has an interlayerdielectric film that covers the polysilicon thin film and includes thegate electrode embedded therein, the ferroelectric capacitive element isa laminate of a lower electrode, a ferroelectric layer, and an upperelectrode, and the hydrogen concentration of the active element layer ishigher than that of the ferroelectric capacitive element layer, and theoxygen concentration of the ferroelectric capacitive element layer ishigher than that of the active element layer.

In this case, a connecting part that connects the active element and theferroelectric capacitive element by being inserted through the siliconhydronitride layer can be provided. The lower electrode can be formedfrom a conductive oxide. The conductive oxide is, for example, indiumtin oxide. It is preferable that the silicon hydronitride layer isformed by means of plasma CVD (Chemical Vapor Deposition).

The connecting part has, for example, an interconnection formed in thesilicon hydronitride layer, a first via hole that penetrates the siliconhydronitride layer and connects the lower electrode and theinterconnection, and a second via hole that penetrates the interlayerdielectric film and connects the source/drain regions and theinterconnection. It is also possible that the connecting part includesan interconnection formed in the silicon hydronitride layer, a first viahole that penetrates the silicon hydronitride layer and connects theupper electrode and the interconnection, and a second via hole thatpenetrates the interlayer dielectric film and connects the source/drainregions and the interconnection. In this case, the ferroelectric film isformed on the silicon hydronitride layer so as to cover the lowerelectrode, and the first via hole can be formed so as to be insertedthrough an opening formed in the ferroelectric film.

The semiconductor device is, for example, a nonvolatile memory in whichthe active element is used as a switching element, and the ferroelectriccapacitive element is used as a capacitive part.

A manufacturing method for a semiconductor device according to a thirdaspect of the present invention comprises the steps of: forming a thinfilm transistor by forming a polysilicon thin film on an insulatingsubstrate, forming a gate electrode via a gate insulating film, andforming source/drain regions and a channel region by ion implantation inthe polysilicon thin film by using the gate electrode as a mask; formingan interconnection layer on an interlayer dielectric film covering thisthin film transistor and forming a first contact to be connected to thethin film transistor through the interlayer dielectric film, forming asilicon hydronitride film on the interlayer dielectric film so as tocover the interconnection layer; forming a lower electrode on thissilicon hydronitride film and forming a second contact to be connectedto the interconnection layer through the silicon hydronitride film;forming a ferroelectric layer on the lower electrode; and forming anupper electrode on the ferroelectric layer.

A manufacturing method for a semiconductor device according to a fourthaspect of the present invention comprises the steps of: forming a thinfilm transistor by forming a polysilicon thin film on an insulatingsubstrate, forming a gate electrode via a gate insulating film, andforming source/drain regions and a channel region by ion implantation inthe polysilicon thin film by using the gate electrode as a mask; formingan interconnection layer on the interlayer dielectric film covering thisthin film transistor and forming a first contact to be connected to thethin film transistor through the interlayer dielectric film; forming asilicon hydronitride film on the interlayer dielectric film so as tocover the interconnection layer; forming a lower electrode on thissilicon hydronitride film; forming a ferroelectric layer on the lowerelectrode; and forming an upper electrode on the ferroelectric layer andforming a second contact to be connected to the interconnection layerthrough the silicon hydronitride film.

In these manufacturing methods for semiconductor devices, the siliconhydronitride film is preferably formed by plasma CVD (vapor growth). Inaddition, in the steps after the step of forming the siliconhydronitride layer, it is preferable that the temperature of thepolysilicon thin film does not become higher than 350° C.

An electronic device according to a fifth aspect of the presentinvention uses the semiconductor device according to any one of claims 1through 11.

The electronic device is, for example, an IC card using a nonvolatilememory described in claim 11 of the present invention. The nonvolatilememory can be formed integrally on the same substrate together with acentral processing unit (CPU), a radio-frequency (RF) interface thattransmits and receives data to and from the exterior, and a read-onlymemory (ROM) for storing data, or the central processing unit (CPU), theradio-frequency (RF) interface for transmitting and receiving data toand from the exterior, and a read-only memory (ROM) for storing data canbe formed on a single crystal silicon substrate separately from thenonvolatile memory.

The electronic device is a radio-frequency IC tag having, for example, anonvolatile memory according to claim 11, and further having atransmission data encoder element, a received data decoder element, anantenna element for data exchange with the exterior, and a controlelement for controlling these elements. In this case, the transmissiondata encoder element, the received data decoder element, and the controlelement can be formed on a single crystal semiconductor substrate.

The electronic device is, for example, a liquid crystal display unit,and in this liquid crystal display unit, a pixel circuit of the liquidcrystal display unit is formed on the insulating substrate of thesemiconductor device according to claim 5, a pixel electrode connectedto a transistor of this pixel circuit is formed on a siliconhydronitride layer that is the same layer as the silicon hydronitridelayer of the semiconductor device, and is an indium tin oxide film thatis the same layer as the indium tin oxide layer forming the lowerelectrode of the semiconductor device.

According to the present invention, a silicon hydronitride layer isformed on a polysilicon thin film formed on an insulating substrate,whereby the hydrogen concentration of an active element layer includinga thin film transistor such as a switching transistor can be maintainedat a high level, and Si—H bonds become stable. Namely, silicon danglingbonds of the thin film transistor of the active element layer below thesilicon hydronitride layer can be terminated by hydrogen, oxygen andmoisture can be prevented from entering from above the substrate, andthe operations of the thin film transistor become stable. In addition,as in the case of claim 2, by providing a ferroelectric capacitiveelement on a silicon hydronitride layer via a conductive oxide film, oras in the case of claim 4, by forming a lower electrode from aconductive oxide, a conductive oxide exists between the siliconhydronitride layer and the ferroelectric layer, so that diffusion ofhydrogen atoms retained in the silicon hydronitride layer formed byplasma CVD into the ferroelectric layer, that is, oxygen deficiencycaused by hydrogen as a reductant can be prevented, whereby problemscaused by oxygen deficiency can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view showing a semiconductor device according to afirst embodiment of the present invention;

FIG. 2 is a sectional view showing a semiconductor device according to asecond embodiment of the present invention;

FIG. 3 is a sectional view showing a semiconductor device according to athird embodiment of the present invention;

FIG. 4 is a sectional view showing a semiconductor device according to afourth embodiment of the present invention;

FIG. 5 is a circuit diagram showing a 1T/1C type nonvolatile memoryusing the semiconductor device of the embodiment of the presentinvention;

FIG. 6 is a circuit diagram showing a 2T/2C type nonvolatile memoryusing the semiconductor device of the embodiment of the presentinvention;

FIG. 7 is a flowchart showing a manufacturing method of thesemiconductor device of the embodiment of the present invention;

FIG. 8 is a flowchart showing another manufacturing method of thesemiconductor device of the embodiment of the present invention;

FIG. 9 is a schematic view showing an IC card using the semiconductordevice of the embodiment of the present invention;

FIG. 10 is a schematic view showing another IC card using thesemiconductor device of the embodiment of the present invention;

FIG. 11 is a schematic view showing an RF-ID tag using the semiconductordevice of the embodiment of the present invention;

FIG. 12 is a schematic view showing another RF-ID tag using thesemiconductor device of the embodiment of the present invention; and

FIG. 13 is a sectional view showing a conventional semiconductor device.

DETAILED DESCRIPTION OF THE PREFFERED EMBODIMENTS

Hereinafter, embodiments of the present invention are described indetail with reference to the accompanying drawings. FIG. 1 is asectional view showing a semiconductor device according to a firstembodiment. On the substrate 1, a protective oxide film 2 is formed. Thethickness of the substrate 1 is, for example, 0.1 to 1.5 mm. Thesubstrate 1 is made of, for example, glass with a smaller content ofalkali metals, quartz, a plastic material such as polycarbonate,polyimide, or the like. The protective oxide film 2 prevents impuritiescontained in the substrate 1 from diffusing in layers higher than theprotective oxide film 2, and when the substrate 1 is made ofhigh-quality quartz, the protective oxide film 2 is not necessary.However, in the case where the substrate 1 is made of glass containingmetal impurities or plastic containing organic impurities, a propermaterial is selected for the protective oxide film 2 according to thesubstrate material. For example, when non-alkali glass (OA-10 made byNippon Electric Glass Co., Ltd.) is used as the substrate 1, an oxidefilm with a film thickness of approximately 300 nm is used as theprotective oxide film 2.

On the protective oxide film 2, a thin film transistor 7 as a switchingtransistor is provided. In the thin film transistor 7, a polysiliconthin film is formed on the protective oxide film 2, and a gate electrode6 is pattern-formed on this polysilicon thin film via a gate insulatingfilm 5. In the polysilicon thin film, by implanting impurity ions ofphosphorus or boron, etc., by using the gate electrode 6 as a mask,source/drain diffusion layers 4 are formed, and in the region betweenthe diffusion layers 4 below the gate electrode 6, a channel region 3 isformed. In the source/drain diffusion layers 4, a low concentrationregion on the channel region 3 side and a high concentration regionoutside the low concentration region are formed by forming a mask andcontrolling the impurity implanting amount, whereby a so-called LDD(Lightly Doped Drain) structure can be provided. One of the diffusionlayers 4 is a source region and the other one is a drain region, whichare disposed opposite each other by sandwiching the channel region 3.

An amorphous silicon layer (a-Si: H layer) is formed into, for example,a 50-nm thickness, annealed to remove hydrogen atoms, and thenirradiated with an excimer laser, whereby the polysilicon thin film(diffusion layers 4 and the channel region 3) is made polycrystal. Bysetting the intensity of the excimer laser irradiation to 300 to 450mJ/cm², a polycrystalline silicon thin film with an average grain sizeof 20 nm to 2 μm is obtained. The larger the average grain size, thehigher the driving performance of the thin film transistor, however,this results in an increase in fluctuations of transistor performancewithin the substrate, so that the average grain size is preferably 200nm. The channel length is, for example, 1 micrometer, and in this case,when the average grain size is 200 nm, its ratio to the channel lengthis sufficiently small as 1/5, whereby variation in transistorperformance caused by the crystal grain size difference can beminimized.

The gate insulating film 5 can be formed on an island formed of apolysilicon thin film by means of plasma CVD. This gate insulating film5 can be formed by plasma CVD. For example, by making the substratetemperature reach 370° C. in oxygen-mixed plasma by usingtetraethoxysilane (TEOS) as a source gas, a gate insulating film formedof a silicon oxide film with a thickness of, for example, 50 nm isformed.

On the gate insulating film 5, a gate electrode 6 is formed. This gateelectrode 6 is a laminate of, for example, a phosphorus-dopedpolysilicon film and chromium film, and the thicknesses of thepolysilicon film and the chromium film are, for example, 100 nm and 200nm, respectively. Namely, for example, a poly (polycrystal) silicon filmgas-doped with phosphorus is deposited by plasma CVD to a thickness of100 nm, and continuously, a Cr film is deposited to 200 nm bysputtering. Thereafter, the polycrystal silicon and Cr laminated film ispatterned by photolithography and etching to form a gate electrode and agate wiring. In this process, the channel length (gate length) of thethin film transistor is determined.

Impurities of phosphorus or boron, etc., are doped into the polysiliconthin film in a self-aligning manner by using the gate as a mask. In thiscase, it is a circuit design choice which of CMOS, PMOS or NMOSconstruction is to be employed, however, if the performance of operationspeed and power consumption is satisfied, PMOS/NMOS is better forreducing manufacturing costs.

After forming the thin film transistor 7, an interlayer dielectric film8 is formed on the entire surface. The interlayer dielectric film 8 is,for example, a silicon oxide film, which can be formed by plasma CVD,and the film thickness thereof is, for example, 400 nm. This interlayerdielectric film 8 can be deposited in oxygen-mixed plasma by usingtetraethoxysilane (TEOS) as a source gas and setting the substratetemperature to 370° C. as in the case of the gate insulating film 5.However, depending on the use, it is also possible that an oxide film isformed by atmospheric CVD.

After forming the interlayer dielectric film 8, heat treatment isapplied for a short period of time, that is, for example, 5 minutes at600° C., whereby the implanted impurities (phosphorus or boron) areactivated. Furthermore, by exposing the substrate to hydrogen plasmadischarge, dangling bonds of the silicon thin film containing thechannel region 3 are inactivated (plasma hydrogenation).

In the interlayer dielectric film 8, a plug 9 a that is connected to onediffusion layer 4 is formed, and on the interlayer dielectric film 8, aninterconnection layer 9 and an interconnection layer 10 are laminated.First, in the interlayer dielectric film 8, a contact hole is formed ata predetermined position by means of photolithography and etching, andthereafter, an interconnection layer 9 is formed on the interlayerdielectric film 8 so as to fill up this contact hole. Furthermore, aninterconnection layer 10 is formed on the interconnection layer 9. Theinterconnection layer 9 is an Al film with a thickness of, for example,500 nm, and the interconnection layer 10 is a Ti film with a thicknessof, for example, 50 nm. These Al film and Ti film can be formed in orderin the same sputtering apparatus without being exposed to the atmospherein the forming process.

On the entire surface of the interlayer dielectric film 8, a siliconhydronitride (SiN_(x):H) film 11 is formed. This silicon hydronitridefilm 11 is formed to a thickness of 400 nm by plasma CVD of a rawmaterial gas mixed with hydrogen at 350° C. so as to cover theinterconnection layers 9 and 10. In this embodiment, plasmahydrogenation has already been applied, however, this process can becommonly used as the plasma hydrogenation when no independent plasmahydrogenation is applied. The interconnection layer 10 improvesadhesiveness between the interconnection layer 9 and the siliconhydronitride film 11.

After this process of forming the silicon hydronitride film 11, theheating temperature is controlled to 350° C. or less so that hydrogen inthe polysilicon thin film is retained in the polysilicon thin film. Inthe silicon hydronitride film 11, a contact hole reaching theinterconnection 10 is formed, and a lower electrode 12 made of ITO(indium tin oxide film) as a conductive oxide is formed on the siliconhydronitride film 11 so as to fill up this contact hole. On the lowerelectrode 12, a ferroelectric film 13 and an upper electrode 14 arelaminated. These lower electrode 12, the ferroelectric film 13, and theupper electrode 14 form a ferroelectric capacitive element. Theferroelectric film 13 is formed of, for example, a PZT (Pb(Zr,Ti)O₃)film. This PZT is deposited by, for example, sputtering at roomtemperature, and then irradiated with an XeCi excimer laser (wavelengthλ=308 nm) with an energy density of 200 mJ/cm² and a laser pulse widthof 50 nsec to be crystallized. When a PZT thin film is formed,generally, a PZT thin film is formed by a sol-gel method or sputteringand then post-heated at a temperature equal to or higher than 600° C.Or, a method is employed in which a film with excellent crystals isobtained by CVD at a low temperature of approximately 450° C. (350 to500° C.). However, as in the case of this embodiment, when sputtering iscarried out at room temperature and then the XeCl excimer laser (λ=308nm) is irradiated, the excimer laser is an ultrashort pulse laser with apulse width of approximately 50 nsec, so that layers other than thelayer absorbing the laser are not heated, so that the polysilicon thinfilm that has been subjected to hydrogen plasma processing can bemaintained at 350° C. or less. Thereby, hydrogen in the polysilicon thinfilm is retained. The ferroelectric layer thus formed is patterned byphotolithography and radio-frequency (RF) plasma etching.

On the ferroelectric film 13, an upper electrode 14 is provided. Theupper electrode 14 is formed of, for example, a gold film. This upperelectrode 14 can be made to commonly serve as an interconnection. On thesilicon hydronitride film 11 including the surface of this upperelectrode 14, a protective film 15 is provided so as to cover this. Theprotective film 15 is formed of, for example, a silicon oxynitride film.

Next, operations of the first embodiment constructed as described aboveare explained. In this embodiment, since the silicon hydronitride film11 is formed by plasma CVD, in the polysilicon thin film forming thesource/drain diffusion layers 4 and the channel region 3 of the thinfilm transistor 7 in the active element region existing below thesilicon hydronitride film, Si dangling bonds are terminated andinactivated by hydrogen. Therefore, in the present invention, thechannel region 3 is formed in the polysilicon thin film having Sidangling bonds inactivated by hydrogen. In the active element layer ofthe switching thin film transistor 7 covered by the interlayerdielectric film 8, hydrogen exists with a high concentration, andfurthermore, a silicon hydronitride film 11 is provided thereon.Thereby, the Si—H bonds in the channel region 3 can be maintainedstably, and the semiconductor performance is not deteriorated bycontamination. In addition, oxygen and moisture, etc., can be preventedby the silicon hydronitride film 11 from entering from above thesubstrate, whereby the operations of the switching thin film transistor7 become stable.

Furthermore, in this embodiment, the lower electrode 12 is formed of aconductive oxide film, so that hydrogen atoms of the siliconhydronitride film (SiN_(x):H) 11 are prevented from diffusing in theferroelectric film 13. Thereby, lowering of the non-dielectric constantand leak current increase due to oxygen deficiency of the ferroelectriccapacitive element can be prevented. Thereby, it becomes possible to usean inexpensive substrate made of glass with a smaller content of alkalimetals, quartz or a plastic material such as polycarbonate or polyimide,whereby the manufacturing cost of the semiconductor device are reduced.

Next, a circuit showing a memory cell of a semiconductor nonvolatilestorage device with the above-described semiconductor device installedinside is explained. FIG. 5 is a circuit diagram showing this 1T/1Cmemory cell. The gate 6 of the switching thin film transistor 7 shown inFIG. 1 is connected to the word line 23. In addition, the diffusionlayer 4 that is not connected to the lower electrode 12 of theferroelectric capacitive element is connected to a bit line 21.Furthermore, the upper electrode 14 of the ferroelectric capacitiveelement is connected to a plate line 24 that polarizes the ferroelectricfilm 13 by applying a voltage to the dielectric capacitor. The bit line21 is connected to a sense amplifier 25 for amplifying a small voltage.Thus, the ferroelectric memory cell is formed by one switching thin filmtransistor 7 and one ferroelectric capacitive element.

In the memory cell constructed as described above, writing on thedielectric capacitor is carried out by polarizing the ferroelectric film13 by applying a voltage to the ferroelectric capacitive element. Whenwriting data “1”, the switching thin film transistor 7 is turned on, thepotential of the bit line 21 is set to a power supply voltage Vcc, andthe potential of the plate line 24 is set to 0V. When writing data “0”,the potential of the bit line 21 is set to 0V, and the potential of theplate line 24 is set to the power supply voltage Vcc. To carry outreading, after the voltage of the bit line 23 is charged to 0V inadvance, a voltage obtained by adding a threshold voltage Vth of theswitching thin film transistor 7 to the power supply voltage Vcc isapplied to the word line 23, the switching thin film transistor 7 isturned on, and the potential of the plate line 24 is increased from 0 tothe power supply voltage Vcc.

Then, when data “1” is written on the ferroelectric capacitive element,great charge movement moving on the hysteresis performance and involvingpolarization inversion occurs. Thereby, the capacitance of the bit line21 is charged and the potential of the bit line 21 rises. The potentialof the bit line 21 at this point is defined as On the other hand, whendata “0” is written, polarization inversion does not occur, so that thecharge movement is small and the increase in potential of the bit line21 is small. The voltage of the bit line 21 at this point is defined asV_(L). When data “1” is written on the dielectric capacitor, the data isdamaged by polarization inversion after reading-out. Therefore, afterreading-out, data rewriting becomes necessary. Therefore, the referencepotential Vref of the sense amplifier 25 is set to a potential that isthe middle of V_(H) and V_(L), and V_(H) and V_(L) are amplified to Vccand 0V by the sense amplifier 25. Furthermore, data rewriting is carriedout by lowering the potential of the plate line 24 to 0V.

Next, a modified example of the memory cell of the semiconductornonvolatile storage device including the semiconductor device of theembodiment shown in FIG. 1 is described. FIG. 6 is a circuit diagramshowing this 2T/2C memory cell. The ferroelectric memory cell shown inFIG. 5 includes one switching thin film transistor 7 and one dielectriccapacitive element. On the other hand, a 2T/2C ferroelectric memory cellis formed by, as shown in FIG. 6, two switching thin film transistors 7and two ferroelectric capacitive elements. The gates of the twoswitching thin film transistors 7 are connected to the word line 23. Thediffusion layers 4 that are not connected to the dielectric capacitorare connected to bit lines 21 and 22, respectively. Furthermore, thedielectric capacitor is connected to the plate line 24. The bit lines 21and 22 are connected to a sense amplifier 25.

In the memory cell constructed as described above, complementary data iswritten on the pair of two ferroelectric capacity elements. Namely, whendata “1” is written on the dielectric capacitor on the bit line 21 side,data “0” is written on the dielectric capacitor on the bit line 22 side.Namely, the dielectric capacitors disposed adjacent to each other insideone memory cell are polarized opposite each other. The sense amplifier25 detects a signal voltage difference between the data “1” and data “0”based on polarization accumulated in the dielectric capacitor. In thiscase, the signal voltage difference between the data “1” and data “0” islarge and is easily detected, so that the operation allowance is great.Thereby, design margins for variation in performance of the switchingtransistor 7 and variation in capacity of dielectric capacitor becomehigh. Therefore, as in the present invention, a 2T/2C memory cell havingwide operation margins are advantageous for the semiconductor device themanufacturing temperature of which is reduced. Other construction,operations, and effects of the memory cell shown in FIG. 6 are the sameas those of the 1T/1C capacity element shown in FIG. 5.

Next, a semiconductor device according to a second embodiment of thepresent invention is described. FIG. 2 is a sectional view showing thestructure of a semiconductor device according to the second embodiment.The second embodiment is different from the first embodiment shown inFIG. 1 in that between the active element layer including the thin filmtransistor 7 and the interlayer dielectric film 8 and the ferroelectriccapacitive element layer including the ferroelectric capacitive elementcomposed of the lower electrode 12, the ferroelectric film 13, and theupper electrode 14 and the protective film 15, a laminate of the siliconhydronitride film (SiN_(x):H) 11 and the conductive oxide film 16 isformed. Namely, in FIG. 1, only the silicon hydronitride film(SiN_(x):H) 11 is formed, however, in the second embodiment shown inFIG. 2, a laminate of the silicon hydronitride film (SiN_(x):H) 11 andthe conductive oxide layer 16 is formed by disposing the siliconhydronitride film (SiN_(x):H) on the thin film transistor side.

In this embodiment, since the conductive oxide film 16 exists betweenthe silicon hydronitride film (plasma CVD-SiN_(x):H layer) 11 and theferroelectric film 13, so that hydrogen atoms contained in the siliconhydronitride film 11 are prevented from diffusing in the ferroelectricfilm 13, and problems such as oxygen deficiency caused by hydrogen as areductant can be prevented. Therefore, the use of the conductive oxidefilm for the lower electrode 12 as in the case of the first embodimentshown in FIG. 1 is not necessary.

Next, a third embodiment of the present invention is described withreference to FIG. 3. In the first embodiment, as shown in FIG. 1, thelower electrode 12 and the interconnection 10 are electrically connectedto each other via a contact hole. On the other hand, in this embodiment,as shown in FIG. 3, the upper electrode 14 is connected to theinterconnection 10. Namely, the ferroelectric film 13 is provided so asto cover the silicon hydronitride film 11 and the lower electrode 12,and in the silicon hydronitride film 11 and the ferroelectric film 13, acontact hole reaching the interconnection 10 is formed. The upperelectrode 14 is formed on the ferroelectric film 13, and when formingthis upper electrode 14, the material thereof fills up the contact hole,whereby a contact 14 a that connects the interconnection 10 and theupper electrode 14 is formed. The semiconductor device of this thirdembodiment has the same construction as that of the semiconductor deviceof the first embodiment except that the lower electrode 12 is connectedto the plate line, and has the same operations and effects.

Next, a fourth embodiment of the present invention is described. FIG. 4is a sectional view showing a semiconductor device of this fourthembodiment. According to this embodiment, ITO is used for the lowerelectrode, and the ferroelectric capacitive element (memory part) andthe liquid crystal display unit (display pixel part) are integrallyformed on the same insulating substrate 1. Up to the process of formingthe lower electrode 12 from ITO as a transparent electrode, the sameprocesses as in FIG. 1 and FIGS. 7 and 8 can be applied. In the displaypixel part, the ferroelectric film 13 and the upper electrode 14 areprevented from being formed on the lower electrode 12, the lowerelectrode 12 made of ITO remains, and between an opposed electrode 18made of ITO formed on an opposed substrate 19 and a lower electrode 12of the display pixel part, liquid crystal 17 is sealed. Thereby, aferroelectric memory and a liquid crystal display part can be formed onthe same substrate. Therefore, the manufacturing cost of the liquidcrystal panel can be reduced.

It is also possible that an organic oriented film (not shown) that wassubjected to rubbing is provided between the lower electrode 12 and theliquid crystal 17 of the liquid crystal display part. Rubbing is amethod for forming fine grooves by rubbing the surface in one directionwith a roll with rayon fibers. It is also possible that orientationprocessing is applied by forming fine grooves by ion beams or a laser onthe surface of the lower electrode 12. Thereby, liquid crystal moleculeson the lower electrode 12 can be oriented in the direction of the finegrooves.

Next, a manufacturing method for the semiconductor device (fourthembodiment) of the present invention is described. FIG. 7 is a flowchartshowing a method for manufacturing the semiconductor device of FIG. 1 inorder of steps. First, the substrate 1 is cleaned (Step S1) and aprotective oxide film 2 is formed on the cleaned substrate 1 (Step S2).The thickness of the substrate 1 is, for example, 0.1 to 1.5 mm. Thesubstrate 1 is formed from glass with a smaller content of alkalimetals, quartz, or a plastic material such as polycarbonate orpolyimide, and formed by, for example, non-alkali glass (OA-10 made byNippon Electric Glass Co., Ltd.). The film thickness of the protectiveoxide film 2 is, for example, 300 nm.

Next, an amorphous silicon film is formed on the protective oxide film 2(Step S3). The amorphous silicon film is formed by, for example, CVD.This amorphous silicon film is formed as a polysilicon film by removinghydrogen atoms by being, for example, annealed and made polycrystal bythe excimer laser (Step S4). The irradiation intensity of the excimerlaser is, for example, 300 to 500 mJ/cm2, and this is a condition forobtaining an average crystal grain size of 200 nm of polysilicon. By theirradiation intensity of 300 to 500 mJ/cm², polysilicon with an averagecrystal grain size of 20 nm to 2 μm is obtained. Next, the polysiliconfilm is patterned by using photolithography and dry-etching (Step S5).

Next, a gate insulating film 5 is formed on the polysilicon film (StepS6). The gate insulating film 5 is formed by, for example, plasma CVD inoxygen-mixed plasma by using tetraethoxysilane (TEOS) as a raw materialgas. During deposition, the substrate temperature is set to, forexample, 370° C., and the film thickness is, for example, 50 nm.

Next, a gate 6 is formed (Step S6). The gate 6 is formed by forming, forexample, a polysilicon film gas-doped with phosphorus by plasma CVD andsputtering a chromium film thereon. The film thickness of thispolysilicon film is, for example, 100 nm, and the film thickness of thechromium film is, for example, 200 nm. This polysilicon/chromiumlaminated film is patterned by photolithography and etching to form agate electrode. The gate length and the channel length are, for example,1 micrometer.

Next, diffusion layers 4 are formed by implanting impurity ions in thepolysilicon film in a self-aligning manner by using the gate 6 as a mask(Step S8). The impurity ions are, for example, phosphorus or boron. Aportion with no impurity ions implanted under the gate 6 becomes achannel film 3. A switching transistor 7 is thus formed.

Next, on the protective oxide film 2, an interlayer dielectric film 8 isformed so as to cover the thin film transistor part 7 and the protectiveoxide film 2 (Step S9). For the interlayer dielectric film 8, forexample, a silicon oxide film is used. The interlayer dielectric film 8is formed by, for example, plasma CVD or atmospheric CVD in oxygen-mixedplasma by using, for example, tetraethoxysilane (TEOS) as a raw materialgas. During deposition, the substrate temperature is set to, forexample, 370° C. and the film thickness is set to, for example, 400 nm.Next, impurity ions in the diffusion layer 4 are activated by heattreatment (Step S10). The heat treatment temperature is, for example,600° C., and the heat treatment period is, for example, 5 minutes.

Next, Si—H bonds are formed by reacting Si dangling bonds contained inthe channel film 3 with hydrogen by hydrogen plasma processing toinactivate the Si dangling bonds (Step S11). Next, the interlayerdielectric film 8 is partially removed by photolithography and etchingto form, in the interlayer dielectric film 8, a contact hole thatpartially opens the surface of one of the two diffusion layers 4 (StepS12). Next, an interconnection 9 is formed so as to fill up this contacthole and cover the surface of the interlayer dielectric film 8, and aninterconnection 10 is formed on the interconnection 9 (Step S13). Theinterconnections 9 and 10 are made of, for example, aluminum andtitanium, respectively, and are continuously formed by, for example,sputtering. The film thicknesses of the interconnections 9 and 10 are500 nm and 50 nm, respectively. Thereafter, the aluminum film and thetitanium film are etched by photolithography and etching to form theinterconnections 9 and 10.

Next, on the interlayer dielectric film 8, a silicon hydronitride film11 is formed so as to cover the side surface of the interconnection 9and the interconnection 10 (Step S14). The silicon hydronitride film 11is formed by plasma CVD using a hydrogen-mixed raw material gas. Thefilm thickness of the silicon hydronitride film 11 is, for example, 400nm. In the steps after this step, for example, the temperature of theswitching transistor 7 is set to be equal to or lower than 350° C. Ifthe temperature of the switching transistor 7 becomes higher than 350°C., this poses a problem in that Si—H bonds formed in the channel film 3by the above-described hydrogen plasma processing are cut, and Sidangling bonds are formed again.

Next, the silicon hydronitride film 11 is partially removed byphotolithography and etching to form a contact hole that partially opensthe surface of the interconnection 10 in the silicon hydronitride film11 (Step S15). Next, a lower electrode 9 is formed so as to fill up thiscontact hole and cover the surface of the silicon hydronitride film 11(Step S16). The lower electrode 12 is formed of, for example, an ITOfilm by, for example, sputtering, and patterned by photolithography andetching.

Next, a ferroelectric film 13 is formed on the lower electrode 12 (StepS17). The ferroelectric film 13 is made of, for example, PZT, and isformed by, for example, sputtering by setting the substrate temperatureto a room temperature, and crystallized by being irradiated with anexcimer laser. This excimer laser is, for example, an XeCl excimerlaser. The conditions of laser irradiation are, for example, an energydensity of 200 mJ/cm² and a laser pulse width of 50 nsec. After laserirradiation, patterning is carried out by photolithography and etchingto form the ferroelectric film 13. This etching is, for example,dry-etching using high frequency plasma.

Next, an upper electrode 14 is formed on the ferroelectric film 13 (StepS18). The upper electrode 14 is formed of, for example, a gold film by,for example, sputtering, and is patterned by photolithography andetching. Next, on the silicon hydronitride film 11, a protective film 15is formed so as to cover the surface of the silicon hydronitride film11, the lower electrode, the side surface of the ferroelectric film 13,and the upper electrode (Step S19). The protective film 15 is formed of,for example, a silicon oxynitride film by, for example, CVD.

In the semiconductor manufacturing method of this embodiment thusconstituted, by hydrogen plasma processing, Si dangling bonds of thechannel film 3 can be inactivated by being bonded to hydrogen. Inaddition, by this hydrogen plasma processing, the hydrogen concentrationin the active element region of the switching transistor 7 covered bythe interlayer dielectric film 8 can be increased, and the siliconhydronitride film 11 is formed thereon, whereby Si—H bonds of thechannel film 3 become stable. Furthermore, in the step of forming theferroelectric film 13 after the step of hydrogen plasma processing, theferroelectric film 13 is crystallized by excimer laser irradiation, sothat the channel film 3 containing Si—H bonds does not reach atemperature exceeding 350° C. Thereby, it is prevented that Si—H bondsare cut and Si dangling bonds are generated, whereby the ferroelectricfilm 13 with desired dielectric performance can be formed.

Next, another embodiment of the semiconductor device manufacturingmethod of this invention is described. FIG. 8 is a flowchart showing apart of steps of this semiconductor device manufacturing method. In theembodiment shown in FIG. 7, after forming a silicon hydronitride film 11in Step S14, a contact hole is formed in the silicon hydronitride film11 in Steps 15 through 18, and the lower electrode 12, the ferroelectricfilm 13, and the upper electrode 14 are formed. On the other hand, inthe semiconductor device manufacturing method of FIG. 8, instead ofSteps 15 through 18 of FIG. 7, a lower electrode 12 is formed first(Step S25), and then a ferroelectric film 13 is formed so as to coverthe lower electrode 12 and the silicon hydronitride film 11 (Step S26.).

Next, a contact hole that partially opens the surface of theinterconnection 10 is formed in the silicon hydronitride film 11 and theferroelectric film 13 by partially removing the silicon hydronitridefilm 11 and the ferroelectric film 13 by photolithography and etching(Step S27). The method of forming the contact hole in the siliconhydronitride film 11 is the same as in FIG. 7. In the ferroelectric film13, the same method as the patterning method used in Step S17 of FIG. 7is used. Next, an upper electrode 14 is formed so as to fill up thiscontact hole and cover the surface of the ferroelectric film 13 (StepS28). The forming method for these lower electrode 12, ferroelectricfilm 13, and upper electrode 14 and the patterning method for the lowerelectrode 12 and the upper electrode 14 are the same as those of FIG. 7.

Next, an embodiment of an electronic device to which the semiconductornonvolatile storage device of this invention is applied is explained.FIG. 9 is an example of an application to an IC card. On a substrate 31that has the card entire shape, a substrate 32 on which a chip ismounted is provided. The substrate 31 is made of, for example, plasticor the like. On the substrate 32, a ROM 33 storing data, an RF/IF (radiofrequency interface) 34 for data exchange with the exterior, and a CPU(central processing unit) 35 for data operation are provided. Inaddition, a nonvolatile memory 36 for storing data received by the RF/IFor data outputted as a result of operation of the CPU is provided on thesubstrate 32. These ROM 33, RF/IF 34, CPU 35, and nonvolatile memory 36are formed on the same substrate 32 by the above-described semiconductordevice manufacturing method. Namely, for the ROM 33, the RF/IF 34, theCPU 35, and the nonvolatile memory 36, an inexpensive substrate made ofglass with a smaller content of alkali metals, quartz, or a plasticmaterial such as polycarbonate or polyimide can be used, whereby themanufacturing costs of the semiconductor device can be reduced. This ICcard uses the nonvolatile memory of the present invention in place of aconventional EEPROM, and in comparison with an IC card using an EEPROM,the writing speed, writing power consumption, and maximum number ofrewriting times can be improved. The semiconductor device thusconstructed is used as an IC card such as an ID card, financial card, ortraffic card.

FIG. 10 shows another IC card using the nonvolatile memory of thepresent invention. In the IC card of FIG. 10, the ROM 37, the RF/IF 39,and the CPU 40 are formed by mounting an IC chip obtained through an LSIprocess on a single crystal silicon substrate 52, and the nonvolatilememory 40 is formed on a glass substrate by the method shown in FIG. 1,FIG. 7, and FIG. 8. In comparison with an IC card using an EEPROM, inthis IC card, the writing speed, writing power consumption, and themaximum number of rewriting times can also be improved, and furthermore,its manufacturing costs are also reduced more than the costs ofconventional IC cards.

Next, an embodiment in which the semiconductor device of this inventionis applied to a radio-frequency ID tag is explained. FIG. 11 is aschematic view showing this radio-frequency ID tag. On a substrate 31that has the shape of the tag, a substrate 32 is provided. Thissubstrate 32 is an inexpensive substrate made of glass with a smallercontent of alkali metals, quartz, or a plastic material such aspolycarbonate or polyimide. On this substrate 32, in the process of thethin film transistor process including the memory of the presentinvention, a received data decoder circuit 41, a transmission dataencoder circuit 42, an antenna element 43 for data exchange with theexterior, a nonvolatile memory 45 for storing data according to thisembodiment, and a control circuit 44 for controlling operations of theseare integrally provided. By thus using the nonvolatile memory of thisinvention, the manufacturing cost of the RF-ID tag can be reduced. Inaddition, in comparison with conventional RF-ID tags using an EEPROM,the writing speed, writing power consumption, and the maximum number ofrewriting times are improved.

Next, another radio-frequency ID tag using the semiconductor device ofthe present invention is explained with reference to FIG. 12. In thisradio-frequency ID tag, on a substrate 31, an IC chip formed through thenormal LSI process on a single crystal silicon substrate 48, anonvolatile memory 49 formed by the method of this invention on aninexpensive substrate made of glass with a smaller content of alkalimetals, quartz, or a plastic material such as polycarbonate orpolyimide, and an antenna element 50 are provided. The IC chip has areceived data decoder circuit 46, a transmission data encoder circuit47, and a control element 48 formed on a single crystal siliconsubstrate 48. In this embodiment, the manufacturing cost can also bereduced more than conventional RF-ID tags using EEPROM. In addition, incomparison with conventional RF-ID tags using an EEPROM, the writingspeed, writing power consumption, and the maximum number of rewritingtimes are improved

1. A manufacturing method for a semiconductor device, said methodcomprising: forming a thin film transistor by forming a polysilicon thinfilm on an insulating substrate, forming a gate electrode via a gateinsulating film, and forming source/drain regions and a channel regionby ion implantation in the polysilicon thin film by using the gateelectrode as a mask; forming an interconnection layer on an interlayerdielectric film covering this thin film transistor and forming a firstcontact to be connected to the thin film transistor through theinterlayer dielectric film, forming a silicon hydronitride film on theinterlayer dielectric film so as to cover the interconnection layer;forming a lower electrode on this silicon hydronitride film and forminga second contact to be connected to the interconnection layer throughthe silicon hydronitride film; forming a ferroelectric layer on thelower electrode; and forming an upper electrode on the ferroelectriclayer, wherein a hydrogen concentration of the thin film transistor ishigher than a hydrogen concentration off the ferroelectric layer, andwherein the semiconductor device further comprises a protective oxidefilm between at least one of the source region, the drain region, theinterlayer dielectric film, and the channel region, and the insulatingsubstrate, wherein the channel region comprises a plurality of Si—Hbonds.
 2. A manufacturing method for a semiconductor device, comprising:forming a polysilicon thin film on an insulating substrate, forming agate electrode via a gate insulating film and forming source/drainregions and a channel region by implanting ions into the polysiliconthin film by using the gate electrode as a mask; forming aninterconnection layer on the interlayer dielectric film covering thisthin film transistor and forming a first contact to be connected to thethin film transistor through the interlayer dielectric film; forming asilicon hydronitride film so as to cover the interconnection layer;forming a lower electrode on this silicon hydronitride film; forming aferroelectric layer on the lower electrode; and forming an upperelectrode on the ferroelectric layer and forming a second contact to beconnected to the interconnection layer through the silicon hydronitridefilm, wherein a hydrogen concentration of the polysilicon thin film, thegate electrode, the source/drain regions, and the channel region arehigher than a hydrogen concentration of the ferroelectric layer, andwherein the semiconductor device further comprises a protective oxidefilm between at least one of the source region, the drain region, theinterlayer dielectric film, and the channel region, and the insulatingsubstrate, wherein the channel region comprises a plurality of Si—Hbonds.
 3. The manufacturing method for a semiconductor device accordingto claim 1, wherein the silicon hydronitride film is formed by a plasmaCVD (Chemical Vapor Deposition) (vapor growth) method.
 4. Themanufacturing method for a semiconductor device according to claim 2,wherein the silicon hydronitride film is formed by plasma CVD (ChemicalVapor Deposition) (vapor growth) method.
 5. The manufacturing method fora semiconductor device according to claim 1, wherein a temperature ofthe polysilicon thin film does not become higher than 350° C. in thesteps after the forming the silicon hydronitride layer.
 6. Themanufacturing method for a semiconductor device according to claim 2,wherein the temperature of the polysilicon thin film does not becomehigher than 350° C. in the steps after the forming the siliconhydronitride layer.
 7. An electronic device, which comprises aradio-frequency IC tag having a nonvolatile memory according to claim 1,and further having a transmission data encoder element, a received datadecoder element, an antenna element for data exchange with the exterior,and a control element for controlling these elements.
 8. The electronicdevice according to claim 7, wherein the transmission data encoderelement, the received data decoder element, and the control element areformed on a single crystal semiconductor substrate.
 9. A semiconductordevice comprising: an insulating substrate; an active element formed inan active element layer disposed above this insulating substrate; aferroelectric capacitive element formed in a ferroelectric capacitiveelement layer disposed above the active element layer; and a siliconhydronitride layer formed between the active element layer and theferroelectric capacitive element layer, wherein the active elementincludes a thin film transistor having a polysilicon thin film havingsource/drain regions and a channel region, a gate electrode formed abovethe channel region, and a gate insulating film formed between thepolysilicon thin film and the gate electrode, wherein the active elementlayer has an interlayer dielectric film which covers the polysiliconthin film and includes the gate electrode embedded, wherein theferroelectric capacitive element is formed by laminating a lowerelectrode, a ferroelectric layer, and an upper electrode, wherein thehydrogen concentration of the active element layer is higher than thehydrogen concentration of the ferroelectric capacitive element, whereinthe semiconductor device further comprises a nonvolatile memory thatuses the active element as a switching element and the ferroelectriccapacitive element as a capacitive part, and wherein the semiconductordevice further comprises a radio-frequency IC tag comprising thenonvolatile memory manufactured according to claim 1, and further havinga transmission data encoder element, a received data decoder element, anantenna element for data exchange with an exterior, and a controlelement for controlling these elements.
 10. The semiconductor deviceaccording to claim 9, wherein the transmission data encoder element, thereceived data decoder element, and the control element are formed on asingle crystal semiconductor substrate.
 11. A semiconductor devicecomprising: an insulating substrate; an active element formed in anactive element layer disposed above the insulating substrate; aferroelectric capacitive element formed in a ferroelectric capacitiveelement layer disposed above the active element layer; a siliconhydronitride layer formed between the active element layer and theferroelectric capacitive element; and a conductive oxide layer formedbetween this silicon hydronitride layer and the ferroelectric capacitiveelement layer, wherein the active element includes a thin filmtransistor having a polysilicon thin film that has source/drain regionsand a channel region, a gate electrode formed above the channel region,and a gate insulating film formed between the polysilicon thin film andthe gate electrode, wherein the active element layer has an interlayerdielectric film that covers the polysilicon thin film and includes thegate electrode embedded therein, wherein the ferroelectric capacitiveelement is a laminate of a lower electrode, a ferroelectric layer, andan upper electrode, wherein the hydrogen concentration of the activeelement layer is higher than that of the ferroelectric capacitiveelement layer, and the oxygen concentration of the ferroelectriccapacitive element layer is higher than that of the active elementlayer, wherein the semiconductor device further comprises a nonvolatilememory that uses the active element as a switching element and theferroelectric capacitive element as a capacitive part, and wherein thesemiconductor device further comprises a radio-frequency IC tagcomprising the nonvolatile memory manufactured according to claim 1, andfurther having a transmission data encoder element, a received datadecoder element, an antenna element for data exchange with an exterior,and a control element for controlling these elements.
 12. Thesemiconductor device according to claim 11, wherein the transmissiondata encoder element, the received data decoder element, and the controlelement are formed on a single crystal semiconductor substrate.